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MSN0880K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOS FET - MORESEMI

भाग संख्या MSN0880K
समारोह N-Channel Enhancement Mode Power MOS FET
मैन्युफैक्चरर्स MORESEMI 
लोगो MORESEMI लोगो 
पूर्व दर्शन
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MSN0880K pdf
MSN0880K
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
Value
0.88
63
Unit
/W
/W
Table 3. Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
VDS=75V,VGS=0V
75 84
1
10
V
μA
μA
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=40A
±100 nA
2 2.85
6.5
4
8
V
m
Dynamic Characteristics
Forward Transconductance
gFS
VDS=10V,ID=40A
20 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
4400
340
260
PF
PF
PF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=30A,
Qgs
VGS=10V
Qgd
100 nC
20 nC
30 nC
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
17.8
11.8
56
nS
nS
nS
Turn-Off Fall Time
tf
14.6 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
80 A
Pulsed Source-drain current(Body Diode)
Forward on voltage(Note 1)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge(Note 1)
ISDM
VSD Tj=25,ISD=40A,VGS=0V
trr Tj=25,IF=75A,di/dt=100A/μs
Qrr
320 A
1.2 V
36 nS
56 nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width 300μs, Duty Cycle 1.5%, RG=25, Starting Tj=25
MORE Semiconductor Company Limited
http://www.moresemi.com
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