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MSN0790K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOS FET - MORESEMI

भाग संख्या MSN0790K
समारोह N-Channel Enhancement Mode Power MOS FET
मैन्युफैक्चरर्स MORESEMI 
लोगो MORESEMI लोगो 
पूर्व दर्शन
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<?=MSN0790K?> डेटा पत्रक पीडीएफ

MSN0790K pdf
MSN0790K
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 0.88 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=71V,VGS=0V
70 74
--
-
1
V
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=40A
- - ±100 nA
23
- 6.1
4
7
V
m
Forward Transconductance
Dynamic Characteristics (Note4)
Gate resistance
gFS
VDS=10V,ID=40A
- 50
Rg VDS=0V,VGS=0V,F=1.0MHz - 0.63
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 4871
-
PF
VDS=15V,VGS=0V,
Coss
- 630.6
-
PF
F=1.0MHz
Crss
- 410.3
-
PF
Turn-on Delay Time
td(on)
- 36.1
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=42A
VGS=10V,RGEN=10
- 54.3
- 85.2
-
-
nS
nS
Turn-Off Fall Time
tf
- 37.3
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
- 85.7
-
nC
VDS=48V,ID=84A,
Qgs
- 23.2
-
nC
VGS=10V
Qgd
- 31.2
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=20A
- - 1.2
V
IS
-
- - 90
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF =84A
- 88.3
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 65.9
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25,VDD=35V,VG=10V,L=0.5mH,Rg=25
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6

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