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MSN0675D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOS FET - MORESEMI

भाग संख्या MSN0675D
समारोह N-Channel Enhancement Mode Power MOS FET
मैन्युफैक्चरर्स MORESEMI 
लोगो MORESEMI लोगो 
पूर्व दर्शन
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<?=MSN0675D?> डेटा पत्रक पीडीएफ

MSN0675D pdf
MSN0675D
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60 68
-
--
1
- - ±100
V
μA
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VDS=25V,ID=30A
23
- 9.1
20 -
4
11.5
-
V
m
S
Clss
- 2350
-
PF
VDS=25V,VGS=0V,
Coss
- 237
-
PF
F=1.0MHz
Crss
- 205
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
- 16
VDD=30V,ID=2A,RL=15- 10
VGS=10V,RG=2.5
- 45
- 12
VDS=30V,ID=30A,
VGS=10V
- 50
- 12
- 16
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=30A
- - 1.2
V
IS
--
75
A
trr
TJ = 25°C, IF =75A
- 28
Qrr
di/dt = 100A/μs(Note3)
- 49
nS
nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6

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डाउनलोड[ MSN0675D Datasheet.PDF ]


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