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TGBR10S150C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL TRENCH MOS SCHOTTKY BARRIER RECTIFIER - UTC

भाग संख्या TGBR10S150C
समारोह DUAL TRENCH MOS SCHOTTKY BARRIER RECTIFIER
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
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<?=TGBR10S150C?> डेटा पत्रक पीडीएफ

TGBR10S150C pdf
TGBR10S150C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM 150 V
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
VRWM
VRRM
150
150
V
V
Average Rectified Output Current Per Device
Per Leg
Total
IO
5A
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms Single
Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Operating Junction Temperature
TJ
-65 ~ +150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (PER LEG)
PARAMETER
Typical Thermal Resistance
SYMBOL
θJC
RATINGS
4
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (PER LEG) (TA =25°C unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Reverse Breakdown Voltage
V(BR)R IR=0.50mA
Forward Voltage Drop
VFM
IF=5A, TJ=25°C
IF=5A, TJ=125°C
Leakage Current
IRM
VR=150V, TJ=25°C
VR=150V, TJ=125°C
Note: Pulse Test: Pulse width 300µs, Duty cycle 2%.
MIN TYP MAX UNIT
150 V
0.84 V
0.68 V
100 μA
10 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TGBR10S150CDUAL TRENCH MOS SCHOTTKY BARRIER RECTIFIERUTC
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