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SP8K24FRA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4V Drive Nch+Nch MOSFET - ROHM

भाग संख्या SP8K24FRA
समारोह 4V Drive Nch+Nch MOSFET
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
1 Page
		
<?=SP8K24FRA?> डेटा पत्रक पीडीएफ

SP8K24FRA pdf
Transistor
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 45
V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 µA VDS= 45V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA
Static drain-source on-state
resistance
RDS (on)
18 25 mID= 6.0A, VGS= 10V
24 34 mID= 6.0A, VGS= 4.5V
26 37 mID= 6.0A, VGS= 4.0V
Forward transfer admittance Yfs 6.0 − − S VDS= 10V, ID= 6.0A
Input capacitance
Ciss
1400
pF VDS= 10V
Output capacitance
Coss 310 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
175
19
30
72
27
15.4 21.6
3.7
6.5
pF f=1MHz
ns VDD 25V
ns
ns
ID= 3.0A
VGS= 10V
RL= 8
ns RG=10
nC VDD 25V, VGS= 5V
nC ID= 6.0A
nC RL= 4Ω, RG= 10
Pulsed
SP8SKP284KF2R4A
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
* pulsed
Symbol
VSD *
Min.
Typ.
Max.
1.2
Unit Condition
V IS=6.0A/VGS=0V
Rev.B
2/4

विन्यास 8 पेज
डाउनलोड[ SP8K24FRA Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SP8K24FRA4V Drive Nch+Nch MOSFETROHM
ROHM


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