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SP8J3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4V Drive Pch+Pch MOS FET - ROHM

भाग संख्या SP8J3
समारोह 4V Drive Pch+Pch MOS FET
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
1 Page
		
<?=SP8J3?> डेटा पत्रक पीडीएफ

SP8J3 pdf
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS
(on)
65 90 mID= −3.5A, VGS= −10V
100 140 mID= −1.75A, VGS= −4.5V
120 165 mID= −1.75A, VGS= −4.0V
Forward transfer admittance
Yfs 1.8
S VDS= −10V, ID= −1.75A
Input capacitance
Ciss
490
pF VDS= −10V
Output capacitance
Coss 110 pF VGS=0V
Reverse transfer capacitance Crss
75 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 10 ns ID= −1.75A
tr 15 ns VDD 15V
td (off)
35
VGS= −10V
ns RL=8.6
tf 10 ns RG=10
Total gate charge
Qg 5.5 nC VDD 15V
Gate-source charge
Qgs 1.5 nC VGS= −5V
Gate-drain charge
Qgd 2.0 nC ID= −3.5A
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.6A, VGS=0V
SP8J3
Rev.A
2/4

विन्यास 5 पेज
डाउनलोड[ SP8J3 Datasheet.PDF ]


शेयर लिंक


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