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SP8J4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Switching Transistors - ROHM

भाग संख्या SP8J4
समारोह Switching Transistors
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
1 Page
		
<?=SP8J4?> डेटा पत्रक पीडीएफ

SP8J4 pdf
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
30
±20
±2.0
±8.0
1.6
8.0
2.0
150
55 to +150
Unit
V
V
A
A 1
A
A 1
W 2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)
170 235 mID= −2.0A, VGS= −10V
270 375 mID= −1.0A, VGS= −4.5V
320 440 mID= −1.0A, VGS= −4.0V
Forward transfer admittance Yfs 1.0 − − S VDS= −10V, ID= −1.0A
Input capacitance
Ciss
190
pF VDS= −10V
Output capacitance
Coss 45 pF VGS=0V
Reverse transfer capacitance Crss
30 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on)
7
ns ID= −1.0A
tr 10 ns VDD 15V
VGS= −10V
td (off) 25 ns RL=15
tf 4.5 ns RGS=10
Total gate charge
Qg 2.4 nC VDD 15V
Gate-source charge
Qgs 1.0 nC VGS= −5V
Gate-drain charge
Qgd 0.8 nC ID= −2.0A
Pulsed
Body diode characteristics (source-drain characteristics)
Forward voltage
VSD
− −1.2 V IS= −1.6A, VGS=0V
SP8J4
2/4

विन्यास 5 पेज
डाउनलोड[ SP8J4 Datasheet.PDF ]


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