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SP8J5FRA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4V Drive Pch+Pch MOS FET - ROHM

भाग संख्या SP8J5FRA
समारोह 4V Drive Pch+Pch MOS FET
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
1 Page
		
<?=SP8J5FRA?> डेटा पत्रक पीडीएफ

SP8J5FRA pdf
Transistors
zElectrical characteristics (Ta=25qC)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)
20 28 mΩ ID= −7A, VGS= −10V
25 35 mΩ ID= −3.5A, VGS= −4.5V
30 42 mΩ ID= −3.5A, VGS= −4.0V
Forward transfer admittance
Yfs 6.0
S VDS= −10V, ID= −3.5A
Input capacitance
Ciss
2600
pF VDS= −10V
Output capacitance
Coss 450 pF VGS=0V
Reverse transfer capacitance Crss
350
Turn-on delay time
td (on) 20
Rise time
tr 50
Turn-off delay time
td (off)
110
Fall time
tf 70
Total gate charge
Qg 25
Gate-source charge
Qgs 5.5
Gate-drain charge
Qgd 10
pF f=1MHz
ns ID= −3.5A
ns VDD 15V
VGS= −10V
ns RL=4.3Ω
ns RG=10Ω
nC VDD 15V
nC VGS= −5V
nC ID= −7A
Pulsed
zBody diode characteristics (Source-drain) (Ta=25qC)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.6A, VGS=0V
SP8JS5PF8RJA5
Rev.A
2/4

विन्यास 7 पेज
डाउनलोड[ SP8J5FRA Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SP8J5FRA4V Drive Pch+Pch MOS FETROHM
ROHM


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