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RUR040N02FRA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Nch 20V 4A Small Signal MOSFET - ROHM

भाग संख्या RUR040N02FRA
समारोह Nch 20V 4A Small Signal MOSFET
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
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RUR040N02FRA pdf
RUR040N02FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 125
- - 165
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
IDSS VDS = 20V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
VGS = 4.5V, ID = 4.0A
Static drain - source
on - state resistance
RDS(on)*4 VGS = 2.5V, ID = 4.0A
VGS = 1.8V, ID = 2.0A
VGS = 1.5V, ID = 0.8A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 4.0A
Values
Unit
Min. Typ. Max.
20 - - V
- 29.0 - mV/
- - 1 μA
- - ±10 μA
0.3 - 1.3 V
- -1.6 - mV/
- 25 35
- 33 46
- 42 59
- 55 110
- 6.9 -
Ω
5.0 - - S
*1 Pw10μs, Duty cycle1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                             
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© 2016 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20160808 - Rev.001

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
RUR040N02FRANch 20V 4A Small Signal MOSFETROHM
ROHM


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