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UPD6514-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1024 x 4 BIT STATIC CMOS RAM - NEC

भाग संख्या UPD6514-1
समारोह 1024 x 4 BIT STATIC CMOS RAM
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPD6514-1?> डेटा पत्रक पीडीएफ

UPD6514-1 pdf
}J. P0444/6514
WRITE CYCLE ® @ ®
---..
-ADDRESS
.
twe
tew
\ -; I I I I I I I
OOUT
_tAS_
tAW
f---twP-
\ ..,
tow
---tWR
tDH
/"
I
DATA IN
VALID
twz I
~
~
~.
.I] ~HIGH IMPEDANCE
/
""
CDNotes:
We IS high for Read Cycles.
® Device IS contlnuouslV selected, ES = VIL
@ Address valid prior to or cOincident with CS tranSition low.
@ If the CS low transition occurs simultaneously with the WE low transition, the
output buffers remain in a high Impedance state.
® WE must be high during all address transitions.
® IWp is measured from the latter of CS or WE going tow to the earher of Cs or WE
going high.
LOW VCC OATA RETENTION
DATA
Vee -------:--'"11
ov - - - - - - - - - - - - - - - - - - - - - - -
---------A----------~
PACKAGE OUTLINE
J.LPD444/6514C
Plastic·
ITEM
A
C
0
F
G
H
M
MILLIMETERS
23.2 MAX.
1.44
2.54
0.45
20.32
1.2
2.SMIN.
0.5 MIN.
4.6 MAX.
5.1 MAX.
7.62
6.7
0.25
INCHES
0.91 MAX.
0.055
0.1
0.02
0.8
0.05
0.1 MIN.
0.02 MIN.
0.18 MAX.
0.2 MAX.
0.3
0.26
0.01
444/6514DSREV1·12-80-CAT
90

विन्यास 4 पेज
डाउनलोड[ UPD6514-1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPD6514-11024 x 4 BIT STATIC CMOS RAMNEC
NEC
UPD6514-21024 x 4 BIT STATIC CMOS RAMNEC
NEC


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