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PJ614DA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या PJ614DA
समारोह Dual N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=PJ614DA?> डेटा पत्रक पीडीएफ

PJ614DA pdf
PJ614DA
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
20
0.35 0.7
1
V
±30 mA
VDS =16V, VGS = 0V
VDS =10V, VGS = 0V, TJ = 70°C
1
mA
10
VGS = 1.8V, ID = 3A
13.6 15.1 20.2
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 2.5V, ID = 3A
VGS = 3.9V, ID = 3A
10.4 11.9 15
9 10.5 13.7
VGS = 4.5V, ID = 3A
8.7
Forward Transconductance1
gfs
VDS =5V, ID =3A
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 10V, VGS = 4.5V,
ID = 3A
VDS = 10V ,
ID@3A, VGS = 4.5V,RG =6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
10.2
40
1133
214
168
1.5
17.4
1.1
5.1
24
32
66
35
14
5.4
12.5
1.4
1.2
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.4 2 2014/9/1

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PJ614DADual N-Channel Enhancement Mode MOSFETUNIKC
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