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P8010BD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Field Effect Transistor - NIKO-SEM

भाग संख्या P8010BD
समारोह N-Channel Field Effect Transistor
मैन्युफैक्चरर्स NIKO-SEM 
लोगो NIKO-SEM लोगो 
पूर्व दर्शन
1 Page
		
<?=P8010BD?> डेटा पत्रक पीडीएफ

P8010BD pdf
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 15A
VDS = 5V, ID = 15A
DYNAMIC
35 A
67 95
mΩ
61 85
25 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
527
68
Reverse Transfer Capacitance
Crss
37
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V
VDS = 0.5V(BR)DSS, ID = 15A
VDS = 40V
ID 15A, VGS = 10V, RGEN =6Ω
18.5
2.7
5.1
11
48
80
73
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
pF
Ω
nC
nS
Continuous Current
Forward Voltage1
IS
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 15A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
15 A
1.1 V
33 nS
35 nC
REV 1.1
2
D-51-5

विन्यास 4 पेज
डाउनलोड[ P8010BD Datasheet.PDF ]


शेयर लिंक


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