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P2610ADG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Field Effect Transistor - NIKO-SEM

भाग संख्या P2610ADG
समारोह N-Channel Field Effect Transistor
मैन्युफैक्चरर्स NIKO-SEM 
लोगो NIKO-SEM लोगो 
पूर्व दर्शन
1 Page
		
<?=P2610ADG?> डेटा पत्रक पीडीएफ

P2610ADG pdf
NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2610ADG
TO-252
Halogen-Free & Lead-Free
Drain-Source-On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 25A
VDS = 40V, ID = 25A
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Crss
Qg
Qgs
Qgd
VDS =80V, VGS = 10V,
ID = 27.5A
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDD = 50V, ID 25A,
VGS = 10V, RGS = 25Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 25A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
21 26 mΩ
38 S
5000
285
189
80
28
23
2
25
250
110
140
pF
nC
Ω
nS
50 A
1.5 V
100 nS
380 nC
REMARK: THE PRODUCT MARKED WITH “P2610ADG”, DATE CODE or LOT #
REV 1.3
Nov-25-2009
2

विन्यास 6 पेज
डाउनलोड[ P2610ADG Datasheet.PDF ]


शेयर लिंक


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