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P3606HK डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Channel Field Effect Transistor - NIKO-SEM

भाग संख्या P3606HK
समारोह Dual N-Channel Field Effect Transistor
मैन्युफैक्चरर्स NIKO-SEM 
लोगो NIKO-SEM लोगो 
पूर्व दर्शन
1 Page
		
<?=P3606HK?> डेटा पत्रक पीडीएफ

P3606HK pdf
NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 5A
VDS = 5V, ID = 5A
DYNAMIC
60
1.3 1.8
2.3
V
±100 nA
1
A
10
36 47
mΩ
33 38
29 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
541
75
Reverse Transfer Capacitance
Crss
45
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V ,ID = 5A
VDS = 30V ,
ID 5A, VGS = 10V, RGEN =6Ω
13.3
7.7
1.7
4.6
16
10
34
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
IF = 5A, dlF/dt = 100A / S
14.6
5
15
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
D-49-5

विन्यास 4 पेज
डाउनलोड[ P3606HK Datasheet.PDF ]


शेयर लिंक


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