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P1006BD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1006BD
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P1006BD?> डेटा पत्रक पीडीएफ

P1006BD pdf
P1006BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
60
1.3 1.8 2.3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
8.1 13
6.8 10
Forward Transconductance1
gfs
VDS =10V, ID = 20A
60 S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
1920
215
140
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
0.7 Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V
) Qgs
VDS = 30V , ID =20A
42
23
nC
6
Gate-Drain Charge2
Qgd
12
Turn-On Delay Time2
td(on)
29
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 30V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
31
51
nS
Fall Time2
tf
31
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
66 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 20A, dl/dt = 100A / mS
26 nS
19 uC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3 Package limitation current is 30A.
REV 1.1
2 2015/8/20

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डाउनलोड[ P1006BD Datasheet.PDF ]


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