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P2610BD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P2610BD
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P2610BD?> डेटा पत्रक पीडीएफ

P2610BD pdf
P2610BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.3 1.8 2.3
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 10A
24 35
22 26.8
Forward Transconductance1
gfs
VDS = 5V, ID = 10A
55 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1918
139
88
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
0.8 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VGS = 10 V,
VDS = 50V, ID = 10A
41.5
5.7
11.6
Turn-On Delay Time2
td(on)
14
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 10A, VGS = 10V, RGEN = 6Ω
42
43
Fall Time2
tf
34
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / μS
29.3
290
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Calculated continuous current based on maximum allowable junction temperature.
36
1.2
nC
nS
A
V
nS
nC
REV 1.2 2 2016/6/6

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डाउनलोड[ P2610BD Datasheet.PDF ]


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