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P8315AD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P8315AD
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P8315AD pdf
P8315AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
150
2 3.1
4
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 7V, ID = 10A
VGS = 10V, ID = 10A
74 88
70 83
Forward Transconductance1
gfs
VDS = 10V, ID = 10A
22 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 10 V,
VDS = 75V, ID = 10A
VDD = 75V,
ID @ 10A, VGS = 10V, RGS= 6Ω
1320
169
42
42
8
21
14
50
48
38
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / μS
122
584
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
20
1.6
A
V
nS
nC
REV 1.0
2 2013-12-13

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डाउनलोड[ P8315AD Datasheet.PDF ]


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