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P0920BD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P0920BD
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P0920BD?> डेटा पत्रक पीडीएफ

P0920BD pdf
P0920BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
200
1 2.0
3
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 4.5A
0.35 0.48
0.33 0.42
Ω
Forward Transconductance1
gfs
VDS = 10V, ID = 4.5A
10 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 10 V,
VDS = 160V, ID = 9A
VDD = 100V,
ID @ 9A, VGS = 10V, RGEN = 6Ω
759
77 nF
21
29.5
2.8 nC
11
28
99
nS
85
97
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 9A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 9A, dlF/dt = 100A / μS
159
822
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
9
1.6
A
V
nS
nC
REV 1.0
2 2013-11-29

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डाउनलोड[ P0920BD Datasheet.PDF ]


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