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P0550ED डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P0550ED
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P0550ED pdf
P0550ED
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
500
234
±100
Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 400V, VGS = 0V , TC = 100 °C
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2.5A
1.26 1.55
Forward Transconductance1
gfs
VDS = 10V, ID = 2.5A
6.5
DYNAMIC
Input Capacitance
Ciss
565
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
68
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 400V, ID = 5A, VGS = 10V
VDD = 250V, ID = 5A, RG = 6Ω
10
18
3
7
30
25
98
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
5
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
277
1.8
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2 2015/4/29

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