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P6006BD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P6006BD
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
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P6006BD pdf
P6006BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1.0 1.5 2.5
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
21
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 8A
VGS = 10V, ID = 12A
VDS = 10V, ID = 10A
60 80
48 60
12
DYNAMIC
Input Capacitance
Ciss
584
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
79
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 10A
VDD = 30V,
ID @ 1A, VGS = 10V, RGEN = 6Ω
44
11.5
2.1
2.5
10
7.3
17.5
5.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = IS, VGS = 0V
12
1.2
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
Ver 1.1
2 2013-3-25

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डाउनलोड[ P6006BD Datasheet.PDF ]


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