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P3606BD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P3606BD
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P3606BD?> डेटा पत्रक पीडीएफ

P3606BD pdf
P3606BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1.3 1.8 2.3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS =48V, VGS = 0V
VDS =40V, VGS = 0V, TJ = 125°C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =15A
VGS =10V, ID =20A
34 47
31 36
Forward Transconductance1
gfs
VDS = 5V, ID =20A
30 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
545
74
44
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.8
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS = 10V
VGS = 4.5V
Qgs
VDS = 30V, ID = 20A
13.8
7.9
2
Gate-Drain Charge2
Qgd
4.9
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS = 30V ,
ID @ 20A, VGS = 10V, RGEN =6Ω
17
11
33
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A /ms
17.6
8.8
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
22
1.3
nC
nS
A
V
nS
nC
REV 1.0
2 2014/12/4

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डाउनलोड[ P3606BD Datasheet.PDF ]


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