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CJZM718 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET and PNP Transistor - JCET

भाग संख्या CJZM718
समारोह N-Channel MOSFET and PNP Transistor
मैन्युफैक्चरर्स JCET 
लोगो JCET लोगो 
पूर्व दर्शन
1 Page
		
<?=CJZM718?> डेटा पत्रक पीडीएफ

CJZM718 pdf
MOSFET ELECTRICAL CHARACTERISTICS
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Max
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
IC=-0.1mA, IE=0
IC=-10mA, IB=0
-25
-25
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA, IC=0
-7.5
Collector cut-off current
ICBO VCB=-20V, IE=0
-25
Emitter cut-off current
IEBO VEB=-6V, IC=0
-25
VCE=-2V, IC=-0.01A
300
DC current gain
hFE *
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-2A
300
150
VCE=-2V, IC=-6A
15
IC=-0.1A, IB=-10mA
-30
Collector-emitter saturation voltage
VCE(sat) *
IC=-1A, IB=-20mA
IC=-1.5A, IB=-50mA
-220
-250
IC=-2.5A, IB=-150mA
-350
Base-emitter saturation voltage
Base-emitter voltage
VBE(sat) *
VBE(on) *
IC=-3.5A, IB=-350mA
IC=-3.5A, IB=-350mA
VCE=-2V, IC=-3.5A
-380
-1.075
-0.95
Transition frequency
fT
VCE=-10V, IC=-50mA, f=100MHz
150
Unit
V
V
V
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
N-ch MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Max
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS VGS =0V, ID=250µA
20
Zero gate voltage drain current
IDSS VDS =16V, VGS = 0V
0.1
Gate-body leakage current
IGSS VGS =±4.5V, VDS = 0V
±1
Gate threshold voltage
VGS(th) VDS =VGS, ID =250µA
0.45 1.2
Drain-source on-resistance
RDS(on)
VGS =4.5V, ID =0.6A
VGS =2.5V, ID =0.5A
0.7
0.85
Forward tranconductance
Diode forward voltage
gfs
VSD *
VDS =10V, ID =0.4A
IS=0.15A, VGS = 0V
0.5
1.2
DYNAMIC PARAMETERS (note 3)
Input Capacitance
Output Capacitance
Ciss
Coss VDS =16V, VGS =0V, f =1MHz
100
16
Reverse Transfer Capacitance
Crss
12
SWITCHING PARAMETERS (note 3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=10V, VGEN=4.5V, RG=10,
RL=47, ID=0.2A
5
5
25
Turn-off fall time
tf
11
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg VDS =10V, VGS =4.5V,
Qgs ID =0.25A
Qgd
750
75
225
Note: 1. When mounted on a minimum pad.
2. When mounted on 1 in2 of 2oz copper board.
3. These parameters have no way to verify.
* Pulse test: pulse width300μs, duty cycle2%
Unit
V
µA
µA
V
S
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
www.cj-elec.com
2
C,Aug,2016

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