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P0850AT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P0850AT
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P0850AT?> डेटा पत्रक पीडीएफ

P0850AT pdf
P0850AT
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
500
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.5
4.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 500V, VGS = 0V , TC = 100 °C
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 4A
0.65 0.85
Forward Transconductance1
gfs
VDS = 20V, ID = 4A
7
DYNAMIC
Input Capacitance
Ciss
1250
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
138
Reverse Transfer Capacitance
Crss
14
Total Gate Charge2
Qg
21.6
Gate-Source Charge2
Qgs VDD = 250V, ID = 4.8A, VGS = 10V
7.2
Gate-Drain Charge2
Qgd
6.6
Turn-On Delay Time2
td(on)
23
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 250V, ID = 4.8A, RG=25Ω
71
112
Fall Time2
tf
69
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 4.8A, dlF/dt = 100A / mS
Qrr VGS = 0V
480
5
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
8
1.7
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16

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डाउनलोड[ P0850AT Datasheet.PDF ]


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