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P2610ATG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P2610ATG
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P2610ATG pdf
P2610ATG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250μA
100
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.5 2.3 4.0
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±250
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
10
On-State Drain Current1
ID(ON)
VDS = 10V, VGS = 10V
50
Drain-Source On-State
Forward Tra1 nsconductance1
RDS(ON)
gfs
VGS = 10V, ID = 25A
VDS = 40V, ID = 25A
21 26
38
DYNAMIC
Input Capacitance
Ciss
4900
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
887
Reverse Transfer Capacitance
Crss
186
Total Gate Charge2
Qg
79
Gate-Source Charge2
Qgs VDS = 80V, VGS = 10V, ID = 50A
31
Gate-Drain Charge2
Qgd
30
Turn-On Delay Time2
td(on)
25
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 50V,
ID 50A, VGS = 10V, RGEN = 25Ω
250
110
Fall Time2
tf
140
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr
100
Reverse Recovery Charge
Qrr
380
1Pulse test : Pulse Width 300 μsec, Duty Cycle 2.
2Independent of operating temperature.
50
1.5
UNIT
V
nA
μA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2011/4/8

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डाउनलोड[ P2610ATG Datasheet.PDF ]


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