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P2806AT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P2806AT
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P2806AT?> डेटा पत्रक पीडीएफ

P2806AT pdf
P2806AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
RFoerswisatradncTera1 nsconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 10V, ID = 25A
VDS = 5V, ID = 25A
60
1.8 2.4 4.0
±250
1
10
110
26 30
25
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
1240
173
97
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.7
Total Gate Charge2
Qg
21
Gate-Source Charge2
Qgs VDS = 30V, VGS = 10V, ID = 25A
7
Gate-Drain Charge2
Qgd
5
Turn-On Delay Time2
td(on)
10
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 0.5V(BR)DSS, RL = 1.5Ω
ID @ 20A, VGS = 10V, RG = 5.6Ω
145
28
Fall Time2
tf
77
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = IS, dlF/dt = 100A / μS
40
48
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
34
1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13

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डाउनलोड[ P2806AT Datasheet.PDF ]


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