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P1006BT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Field Effect Transistor - NIKO-SEM

भाग संख्या P1006BT
समारोह N-Channel Field Effect Transistor
मैन्युफैक्चरर्स NIKO-SEM 
लोगो NIKO-SEM लोगो 
पूर्व दर्शन
1 Page
		
<?=P1006BT?> डेटा पत्रक पीडीएफ

P1006BT pdf
NIKO-SEM
N-Channel Enhancement Mode
P1006BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 10V, ID = 20A
DYNAMIC
60
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1853
224
142
0.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V , ID =20A
VDS = 30V , ID 20A,
VGS = 10V, RGEN =6Ω
42.2
23.1
5.6
12.8
30
29
50
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Package limitation current is 30A
IF= 20A, dI/dt=100A/μs
29
27
61
1.3
S
pF
Ω
nC
nS
A
V
nS
uC
REV 1.0
2
D-45-3

विन्यास 4 पेज
डाउनलोड[ P1006BT Datasheet.PDF ]


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