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P3506DT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Logic Level Enhancement Mode Field Effect Transistor - NIKO-SEM

भाग संख्या P3506DT
समारोह P-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स NIKO-SEM 
लोगो NIKO-SEM लोगो 
पूर्व दर्शन
1 Page
		
<?=P3506DT?> डेटा पत्रक पीडीएफ

P3506DT pdf
NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V,
-150
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = -30V, f = 1MHz
2590
260
Reverse Transfer Capacitance
Crss
150
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS =0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID =-25A
VDS = -30V , RL = 1Ω
ID -20A, VGS = -10V, RGEN =6Ω
4.8
38.6
13.6
8.8
30
90
70
15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -25A, VGS = 0V
-40
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr IF = -25A, dlF/dt = 100A / µS
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
38
48
A
pF
Ω
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P3506DT”, DATE CODE or LOT #
REV 1.0
Mar-01-2011
2

विन्यास 4 पेज
डाउनलोड[ P3506DT Datasheet.PDF ]


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