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R8001CND डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ROHM

भाग संख्या R8001CND
समारोह Power MOSFET
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
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<?=R8001CND?> डेटा पत्रक पीडीएफ

R8001CND pdf
R8001CND
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 3.44 /W
- - 100 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 800V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±25V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
RDS(on)*4 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
800 - - V
   
- - 100 μA
---
- - ±10 μA
3.5 - 5.5 V
   
- 6.7 8.7 Ω
- 13 -
- 7.2 - Ω
                                                                                         
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2/11
20160909 - Rev.002

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R8001CNDPower MOSFETROHM
ROHM


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