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FZ1200R16KF4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Power Module - Eupec

भाग संख्या FZ1200R16KF4
समारोह IGBT Power Module
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FZ1200R16KF4 pdf
IGBT-Module
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Isolations-Prüfspannung
insulation test voltage
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
Gate-Schwellenspannung
Eingangskapazität
Kollektor-Emitter Reststrom
gate threshold voltage
input capacity
collector-emitter cut-off current
Gate-Emitter Reststrom
Emitter-Gate Reststrom
Einschaltzeit (induktive Last)
gate leakage current
gate leakage current
turn-on time (inductive load)
Speicherzeit (induktive Last)
storage time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Charakteristische Werte / Characteristic values
tp=1 ms
tC=25°C, Transistor /transistor
tp=1ms
RMS, f=50 Hz, t= 1 min.
iC=1,2kA, vGE=15V, tvj=25°C
iC=1,2kA, vGE=15V, tvj=125°C
iC=80mA, vCE=vGE, tvj=25°C
fO=1MHz,tvj=25°C,vCE=25V, vGE=0V
vCE=1600V, vGE=0V, tvj=25°C
vCE=1600V, vGE=0V, tvj=125°C
vCE=0V, v GE=20V, tvj=25°C
vCE=0V, v EG=20V, tvj=25°C
iC=1,2kA,v CE=900V,v L=±15V
RG=1,8, tvj=25°C
RG=1,8, tvj=125°C
iC=1,2kA,v CE=900V,v L=±15V
RG=1,8, tvj=25°C
RG=1,8, tvj=125°C
iC=1,2kA,v CE=900V,v L=±15V
RG=1,8, tvj=25°C
RG=1,8, tvj=125°C
VCES
IC
ICRM
Ptot
VGE
IF
IFRM
VISOL
vCE sat
vGE(TO)
Cies
iCES
iGES
iEGS
ton
ts
tf
Transistor / Transistor
Einschaltverlustenergie pro Puls
Abschaltverlustenergie pro Puls
Inversdiode / Inverse diode
Durchlaßspannung
Rückstromspitze
turn-on energy loss per pulse
turn-off energy loss per pulse
forward voltage
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Thermische Eigenschaften / Thermal properties
iC=1,2kA,v CE=900V,v L=±15V
RG=1,8, tvj=125°C, LS=70nH
iC=1,2kA,v CE=900V,v L=±15V
RG=1,8, tvj=125°C, LS=70nH
iF=1200A, vGE=0V, t vj=25°C
iF=1200A, vGE=0V, t vj=125°C
iF=1,2kA, -diF/dt=6kA/µs
vRM=900V, vEG=10V, t vj=25°C
vRM=900V, vEG=10V, t vj=125°C
iF=1,2kA, -diF/dt=6kA/µs
vRM=900V, vEG=10V, t vj=25°C
vRM=900V, vEG=10V, t vj=125°C
Eon
Eoff
vF
IRM
Qr
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzul. Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
Mechanische Eigenschaften / Mechanical properties
Transistor / transistor, DC
Diode /diode, DC
pro Module / per Module
RthJC
RthCK
tvj max
tc op
tstg
Innere Isolation
internal insulation
Anzugsdrehmoment f. mech. Befestigung / mounting torque
terminals M6 / tolerance ±10%
M1
Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque
terminals M4 / tolerance +5/-10%
M2
terminals M8
Gewicht
weight
G
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid
icnombination with the belonging technical notes.
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection
FZ 1200 R 16 KF4
min. typ.
- 3,5
- 4,6
4,5 5,5
- 180
-8
- 80
--
--
1600 V
1200 A
2400 A
7800 W
± 20 V
1200 A
2400 A
3,4 kV
max.
3,9 V
5V
6,5 V
- nF
- mA
- mA
400 nA
400 nA
- 0,8
-1
- µs
- µs
- 1,1
- 1,3
- µs
- µs
- 0,25
- 0,3
- µs
- µs
- 490
- 290
- 2,4
- 2,2
- 460
- 640
- 100
- 220
- mWs
- mWs
2,8 V
-V
-A
-A
- µAs
- µAs
0,016 °C/W
0,04 °C/W
0,008 °C/W
150 °C
-40...+125 °C
-40...+125 °C
Al2O3
3 Nm
2 Nm
8...10 Nm
ca. 1500 g
tfg = 10 µs
VCC = 1000 V
vL = ±15V
vCEM = 1300 V
RGF = RGR = 1,8 W
iCMK1 » 12000 A
tvj = 125°C
iCMK2 » 9000 A
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions
v
CEM = VCES - 15nH x |dic/dt|

विन्यास 5 पेज
डाउनलोड[ FZ1200R16KF4 Datasheet.PDF ]


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