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APM4947K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - ANPEC Electronics

भाग संख्या APM4947K
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स ANPEC Electronics 
लोगो ANPEC Electronics लोगो 
पूर्व दर्शन
1 Page
		
<?=APM4947K?> डेटा पत्रक पीडीएफ

APM4947K pdf
APM4947K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM*
www.DataSheet4U.com
IS*
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
VGS=-10V
TA=25°C
TA=100°C
Rating
-30
±20
-2.5
-10
-1.7
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM4947K
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V, IDS=-250µA
VDS=-24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-2.5A
VGS=-4.5V, IDS=-2A
ISD=-1.7A, VGS=0V
VDS=-15V, VGS=-10V,
IDS=-2.5A
-30
-1
-1
-30
-1.5 -2
±100
90 120
145 185
-0.8 -1.3
8 12
1.8
1.4
Unit
V
µA
V
nA
m
V
nC
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw

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डाउनलोड[ APM4947K Datasheet.PDF ]


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