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FDP032N08B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDP032N08B
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP032N08B?> डेटा पत्रक पीडीएफ

FDP032N08B pdf
Package Marking and Ordering Information
Part Number
FDP032N08B_F102
Top Mark
FDP032N08B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 64 V, VGS = 0 V
VDS = 64 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgd
Vplateau
Qsync
Qoss
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Volatge
Total Gate Charge Sync.
Output Charge
Equivalent Series Resistance (G-S)
VDS = 40 V, VGS = 0 V,
f = 1 MHz
VDS = 40 V, VGS = 0 V
VDS = 40 V, ID = 100 A,
VGS = 10 V
VDS = 0 V, ID = 50 A
VDS = 40 V, VGS = 0 V
f = 1 MHz
(Note 4)
Min.
80
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.04
-
-
-
-
2.85
168
8245
1250
28
2337
111
44
23
5.6
98.2
114
2.3
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 40 V, ID = 100 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 100 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDD = 40 V, ISD = 100 A,
dIF/dt = 100 A/μs
Notes:
1. Repe titive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 20.8 A, starting TJ = 25°C.
3. ISD 100 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
38
44
71
31
-
-
-
75
102
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.5 V
3.3 mΩ
-S
10965
1660
-
-
144
-
-
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
V
nC
nC
Ω
86 ns
97 ns
152 ns
72 ns
211 A
844 A
1.3 V
- ns
- nC
©2012 Fairchild Semiconductor Corporation
FDP032N08B Rev. C1
2
www.fairchildsemi.com

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