DataSheet.in

FDP030N06B_F102 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDP030N06B_F102
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP030N06B_F102?> डेटा पत्रक पीडीएफ

FDP030N06B_F102 pdf
Package Marking and Ordering Information
Part Number
FDP030N06B_F102
Top Mark
FDP030N06B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgd
Vplateau
Qoss
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Volatge
Output Charge
Equivalent Series Resistance (G-S)
VDS = 30 V, VGS = 0 V,
f = 1 MHz
VDS = 30 V, VGS = 0 V
VDS = 30 V, ID = 100 A,
VGS = 10 V
VDS = 30V, VGS = 0V
f = 1 MHz
(Note 4)
Min.
60
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
2.67
206
6035
1685
55
2619
76
29
12
5.2
92.4
2.0
Max. Unit
-
-
1
±100
V
V/oC
μA
nA
4V
3.1 mΩ
-S
8030
2240
-
-
99
-
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
V
nC
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 30 V, ID = 100 A,
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 100 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 100 A,
dIF/dt = 100A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 20 A, starting TJ = 25°C.
3. ISD 100 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
32 74 ns
33 76 ns
56 122 ns
23 56 ns
-
195*
A
- 780 A
- 1.25 V
71 - ns
78 - nC
©2012 Fairchild Semiconductor Corporation
FDP030N06B_F102 Rev. C2
2
www.fairchildsemi.com

विन्यास 10 पेज
डाउनलोड[ FDP030N06B_F102 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDP030N06B_F102MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English