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FDP060AN08A0 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDP060AN08A0
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP060AN08A0?> डेटा पत्रक पीडीएफ

FDP060AN08A0 pdf
Package Marking and Ordering Information
Device Marking
FDB060AN08A0
FDP060AN08A0
Device
FDB060AN08A0
FDP060AN08A0
Package
D2-PAK
TO-220
Reel Size
330 mm
Tube
Tape Width
24 mm
N/A
Quantity
800 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 60V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 80A, VGS = 10V
ID = 40A, VGS = 6V
ID
TJ
=
=
8107A5,oCVGS
=
10V,
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V
ID = 80A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 40V, ID = 80A
VGS = 10V, RGS = 3.9
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 109µH, IAS = 80A.
2: Pulse width = 100s
ISD = 80A
ISD = 40A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
Min Typ Max Unit
75 - - V
-
-
-
-
1
250
µA
- - ±100 nA
2-4
- 0.0048 0.006
- 0.0066 0.010
- 0.010 0.013
V
- 5150 -
pF
- 800 -
pF
- 230 -
pF
73 95 nC
- 10 13 nC
- 29 - nC
- 19 - nC
- 16 - nC
- - 147 ns
- 19 - ns
- 79 - ns
- 37 - ns
- 38 - ns
- - 113 ns
- - 1.25 V
- - 1.0 V
- - 37 ns
- - 38 nC
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
2
www.fairchildsemi.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDP060AN08A0MOSFETFairchild Semiconductor
Fairchild Semiconductor


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