SDB10150PR डेटा पत्रक PDF( Datasheet डाउनलोड )

		



Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
Per diode
Total device
Symbol
Rth(J-C)
SDB10150PR
Value
4.0
3.6
Unit
C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Peak forward voltage drop
Reverse leakage current
Junction capacitance
Note:
(1) Pulse test : tP≤380us, Duty cycle≤2%
(2) Pulse test : tP≤20ms, Duty cycle≤2%
VFM (1)
IRM (2)
CJ
IFM = 5A
TJ=25℃
TJ=125℃
VR = VRRM
TJ=25℃
TJ=125℃
VR = 4VDC, f=1MHz
Min. Typ. Max. Unit
- - 0.88 V
- - 0.75 V
- - 10 uA
- - 10 mA
- 80 - pF
Rev. date: 31-MAR-15
KSD-D0O046-000
www.auk.co.kr
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