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FQD16N25C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FQD16N25C
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQD16N25C?> डेटा पत्रक पीडीएफ

FQD16N25C pdf
Package Marking and Ordering Information
Device Marking
FQD16N25C
Device
FQD16N25CTM
Package
D-PAK
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 8A
VDS = 40 V, ID =8 A
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 125 V, ID = 16A,
RG = 25 Ω
VDS = 200 V, ID = 16 A,
VGS = 10 V
(Note 4)
(Note 4)
250
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 16 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 16 A,
dIF / dt = 100 A/μs
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 2.7 mH, IAS = 16 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 16 A, di/dt 300 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
--
--
--
Typ
--
0.31
--
--
--
--
--
0.22
10.5
830
170
68
15
130
135
105
41
5.6
22.7
--
--
--
260
2.47
Max Unit
--
--
10
100
100
-100
V
V/°C
μA
μA
nA
nA
4.0 V
0.27 Ω
-- S
1080
220
89
pF
pF
pF
40
270
280
220
53.5
--
--
ns
ns
ns
ns
nC
nC
nC
16 A
64 A
1.5 V
-- ns
-- μC
©2006 Fairchild Semiconductor Corporation
FQD16N25C Rev. C1
2
www.fairchildsemi.com

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