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FDD7N25LZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDD7N25LZ
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD7N25LZ?> डेटा पत्रक पीडीएफ

FDD7N25LZ pdf
Package Marking and Ordering Information
Device Marking
FDD7N25LZ
Device
FDD7N25LZ
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate to Body Leakage Current, Forward
Gate to Body Leakage Current, Reverse
ID = 250A, VGS = 0V, TC = 25oC
ID = 250A, Referenced to 25oC
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125oC
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
250
-
-
-
-
-
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 3.1A
VGS = 5V, ID = 3.1A
VDS = 20V, ID = 3.1A
1.0
-
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 250V ID = 6.2A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 6.2A
VGS = 10V, RG = 25
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.2A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 6.2A
dIF/dt = 100A/s
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.25
-
-
-
-
-
0.43
0.45
7
480
65
8
12
1.5
4
10
15
75
30
-
-
-
130
0.6
Quantity
2500
Max. Unit
-V
- V/oC
1
A
10
10 A
-10 A
2.0 V
0.55
0.57
-S
635 pF
85 pF
12 pF
16 nC
- nC
- nC
30 ns
40 ns
160 ns
70 ns
5.5 A
20 A
1.4 V
- ns
- C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6mH, IAS = 6.2A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
2
www.fairchildsemi.com

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