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FDP090N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDP090N10
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP090N10?> डेटा पत्रक पीडीएफ

FDP090N10 pdf
Package Marking and Ordering Information
Part Number
FDP090N10
Top Mark
FDP090N10
Package Packing Method
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 37.5 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 75 A,
VGS = 10 V, RG = 25 Ω
VDS = 50 V, ID = 75 A,
VGS = 10 V
(Note 4)
(Note 4)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
-
-
-
-
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 0.11 mH, IAS = 75 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 75 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Typ. Max. Unit
- -V
0.1 - V/oC
-
-
1
500
μA
- ±100 nA
3.5 4.5 V
7.2 9 mΩ
100 - S
6185
585
235
8225
775
355
pF
pF
pF
107 224 ns
322 655 ns
166 342 ns
149 309 ns
89 116 nC
37 - nC
22 - nC
- 75 A
- 300 A
- 1.25 V
73 - ns
166 - nC
©2008 Fairchild Semiconductor Corporation
FDP090N10 Rev. C4
2
www.fairchildsemi.com

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डाउनलोड[ FDP090N10 Datasheet.PDF ]


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