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MXP6010CTS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V N-Channel MOSFET - MaxPower

भाग संख्या MXP6010CTS
समारोह 60V N-Channel MOSFET
मैन्युफैक्चरर्स MaxPower 
लोगो MaxPower लोगो 
पूर्व दर्शन
1 Page
		
<?=MXP6010CTS?> डेटा पत्रक पीडीएफ

MXP6010CTS pdf
ON Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
RDS(ON)
Static Drain-to-Source
On-Resistance
8.5 10 mΩ VGS= 10V, ID=24A
VGS(TH)
Gate Threshold Voltage 2
4 V VDS=VGS, ID=250µA
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Parameter
Min
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”)
Charge
td(on) Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Typ
2679
343
120
40
16
11
11
45
26
11
Max Units
Test Conditions
pF VGS=0V, VDS=25V, f=1.0MHz
nC VDD=30V, ID=38A, VG=10V
ns VDD=30V, ID=38A, VG=10V,
RG=2.5Ω
Source-Drain Diode Characteristics
Tc=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
VSD Diode Forward Voltage
1.2 V IS=30A, VGS=0V
Published by
MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
2
All Rights Reserved.
MXP6010CTS Rev 1.0, Jan 2011

विन्यास 5 पेज
डाउनलोड[ MXP6010CTS Datasheet.PDF ]


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