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FDD850N10L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDD850N10L
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD850N10L?> डेटा पत्रक पीडीएफ

FDD850N10L pdf
Package Marking and Ordering Information
Part Number
FDD850N10L
Top Mark
FDD850N10L
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 12 A
VGS = 5 V, ID = 12 A
VDS = 10 V, ID = 15.7 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V
VGS = 5 V
VDS = 80 V,
ID = 15.7 A
Switching Characteristics
td(on)
tr
td(off)
tf
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
VDD = 50 V, ID = 15.7 A,
VGS = 5 V, RG = 4.7 Ω
f = 1 MHz
(Note 4)
Min.
100
-
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
61
64
31
1100
80
42
22.2
12.3
3.0
5.7
17
21
27
8
1.75
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDS = 80 V, ISD = 15.7 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, IAS = 9.1 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 15.7 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
38
50
Quantity
2500 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
2.5 V
75 mΩ
96 mΩ
-S
1465
105
-
28.9
16.0
-
-
pF
pF
pF
nC
nC
nC
nC
44 ns
52 ns
64 ns
26 ns
-Ω
15.7 A
63 A
1.3 V
- ns
- nC
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
2
www.fairchildsemi.com

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