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FDN86501LZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDN86501LZ
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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FDN86501LZ pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 2.6 A
VGS = 4.5 V, ID = 2.1 A
VGS = 10 V, ID = 2.6 A, TJ = 125 °C
VDS = 10 V, ID = 2.6 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 2.6 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 30 V,
ID = 2.6 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.6 A
(Note 2)
IF = 2.6 A, di/dt = 100 A/μs
Min.
60
1.0
0.1
Typ.
68
1.9
-5
89
121
152
8
236
77
4.9
0.8
4.4
1.2
9.6
1.2
3.8
1.9
0.7
0.6
0.9
31
19
Max. Units
V
mVC
1 μA
±10 μA
2.4 V
mV/°C
116
173 mΩ
198
S
335 pF
110 pF
10 pF
2.0 Ω
10 ns
10 ns
20 ns
10 ns
5.4 nC
2.7 nC
nC
nC
1.3 V
50 ns
31 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 80 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 180 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 6 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 2 A, VDD = 60 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 9 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
©2015 Fairchild Semiconductor Corporation
FDN86501LZ Rev.1.1
2
www.fairchildsemi.com

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