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STD140N6F7 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - STMicroelectronics

भाग संख्या STD140N6F7
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=STD140N6F7?> डेटा पत्रक पीडीएफ

STD140N6F7 pdf
STD140N6F7
STD140N6F7 electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
ID(1) Drain current (continuous) at Tcase = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total power dissipation at Tcase = 25 °C
EAS (3) Single pulse avalanche energy
dv/dt (4) Drain-body diode dynamic dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Current is limited by package.
2. Pulse width is limited by safe operating area.
3. starting Tj = 25 °C, ID = 20 A, VDD = 30 V.
4. ISD= 80 A; di/dt = 600 A/μs; VDD = 48 V; Tj < Tjmax
Table 2. Thermal data
Symbol
Parameter
Rthj-pcb (1) Thermal resistance junction-pcb
Rthj-c Thermal resistance junction-case
1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.
Value
60
±20
80
80
320
134
200
7.1
Unit
V
V
A
A
W
mJ
V/ns
-55 to 175
°C
Value
50
1.12
Unit
°C/W
DS11454 - Rev 3
page 2/17

विन्यास 17 पेज
डाउनलोड[ STD140N6F7 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
STD140N6F7N-CHANNEL POWER MOSFETSTMicroelectronics
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