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EN29LV800C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory - Eon Silicon Solution

भाग संख्या EN29LV800C
समारोह 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
मैन्युफैक्चरर्स Eon Silicon Solution 
लोगो Eon Silicon Solution लोगो 
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EN29LV800C pdf
EN29LV800C
EN29LV800C
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- 1 μA typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and fifteen 32-Kword sectors (word mode)
High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 100ms typical
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within
individual sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
JEDEC Standard Embedded Erase and
Program Algorithms
JEDEC standard DATA# polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI)
Low Vcc write inhibit < 2.5V
Minimum 100K endurance cycle
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm TFBGA
Industrial and Automotive temperature Range
GENERAL DESCRIPTION
The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The
EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 70ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29LV800C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector or
full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
Elite Semiconductor Memory Technology Inc.
Rev. J, Issue Date: 2016/06/01

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