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NKT250 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Diode and Thyristor - nELL

भाग संख्या NKT250
समारोह Diode and Thyristor
मैन्युफैक्चरर्स nELL 
लोगो nELL लोगो 
पूर्व दर्शन
1 Page
		
<?=NKT250?> डेटा पत्रक पीडीएफ

NKT250 pdf
SEMICONDUCTOR
NKT250/NKH250 Series RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
NKT250
NKH250
04
08
10
12
14
16
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1000
1200
1400
1600
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
IRRM/I DRM
AT 125 °C
mA
30
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
Maximum I2t for fusing
IT(AV) 180° conduction, half sine wave ,50Hz
lT(RMS)
ITSM
I 2t
180° conduction, half sine wave ,50Hz ,TC = 85°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100%VRRM
reapplied
Sine half wave,
initial TJ =
TJ maximum
Maximum I2t for fusing
I2t t = 0.1 ms to 10 ms, no voltage reapplied
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
VTM ITM = 750A , TJ = 25 °C, 180° conduction
VFM IFM = 750A , TJ = 25 °C, 180° conduction
IH Anode supply = 12 V initial IT = 1 A, TJ = 25 °C
IL
Anode supply = 12 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 °C
VALUES
250
85
393
8500
8925
361
329
253
230
3612
1.7
1.4
200
400
UNITS
A
°C
A
kA2s
kA2s
V
mA
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
IRRM,
IDRM
VISO
dV/dt
TEST CONDITIONS
TJ = 125 °C
50 Hz, circuit to base,
all terminals shorted, 25 ºC ,1s
TJ = TJ maximum,
exponential to 67 % rated V DRM
VALUES
30
3500
500
UNITS
mA
V
Vs
www.nellsemi.com
Page 2 of 4

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NKT250Diode and ThyristornELL
nELL


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