DataSheet.in

NKT250 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Diode and Thyristor - nELL

भाग संख्या NKT250
समारोह Diode and Thyristor
मैन्युफैक्चरर्स nELL 
लोगो nELL लोगो 
पूर्व दर्शन
1 Page
		
<?=NKT250?> डेटा पत्रक पीडीएफ

NKT250 pdf
NKT250/NTK250/NKV250/NKH250 Series RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
NKT250
NTK250
NKV250
NKH250
04
08
10
12
14
16
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1000
1200
1400
1600
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
IRRM/I DRM
AT 125 °C
mA
30
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
Maximum I2t for fusing
IT(AV) 180° conduction, half sine wave ,50Hz
lT(RMS)
ITSM
I 2t
180° conduction, half sine wave ,50Hz ,TC = 85°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100%VRRM
reapplied
Sine half wave,
initial TJ =
TJ maximum
Maximum I2t for fusing
I2t t = 0.1 ms to 10 ms, no voltage reapplied
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
VTM ITM = 750A , TJ = 25 °C, 180° conduction
VFM IFM = 750A , TJ = 25 °C, 180° conduction
IH Anode supply = 12 V initial IT = 1 A, TJ = 25 °C
Anode supply = 12 V resistive load = 1 Ω
IL Gate pulse: 10 V, 100 μs, TJ = 25 °C
VALUES
250
85
393
8500
8925
361
329
253
230
3612
1.7
1.4
200
400
UNITS
A
°C
A
kA2s
kA2s
V
mA
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
TEST CONDITIONS
td TJ = 25°C, gate current = 1A, dIg/dt= 1 A/µs
tr Vd = 0.67 VDRM
tq
ITM = 300A, dI/dt = 15 A/µs, TJ = TJ maximum
VR = 50V, dV/dt = 20 V/dt, gate 0V, 100Ω
VALUES
1.0
2.0
50 to 150
UNITS
µs
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
lRRM,
lDRM
TEST CONDITIONS
TJ = 125°C
VISO
50 Hz, circuit to base,
all terminals shorted, 25°C, 1s
dV/dt
TJ = TJ maximum,
exponential to 67% rated VDRM
VALUES
30
3500
1000
UNITS
mA
V
Vs
www.nellsemi.com
Page 2 of 4

विन्यास 4 पेज
डाउनलोड[ NKT250 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NKT250Diode and ThyristornELL
nELL


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English