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HCS60R180E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel Super Junction MOSFET - SemiHow

भाग संख्या HCS60R180E
समारोह 600V N-Channel Super Junction MOSFET
मैन्युफैक्चरर्स SemiHow 
लोगो SemiHow लोगो 
पूर्व दर्शन
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<?=HCS60R180E?> डेटा पत्रक पीडीएफ

HCS60R180E pdf
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 10 A
2.5
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 600 V, VGS = 0 V
VDS = 480 V, TJ = 125
VGS = ρ30 V, VDS = 0 V
600
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 10 A,
RG = 25 Ÿ
VDS = 480 V, ID = 10 A
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 20 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2.7A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
-- 4.5
0.15 0.18
-- --
-- 1
-- 100
-- ρ100
1440
105
3.9
--
--
--
44 --
20 --
85 --
17 --
22 29
8 --
4 --
-- 20
-- 60
-- 1.4
367 --
4.2 --
V
Ÿ
V
nC
nC
nC
A
V
ȝ&
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣ͑ͣͧ͑͢͡

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