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IGB30N60T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - Infineon

भाग संख्या IGB30N60T
समारोह IGBT
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=IGB30N60T?> डेटा पत्रक पीडीएफ

IGB30N60T pdf
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction case
Thermal resistance,
junction ambient
IGB30N60T
TRENCHSTOPSeries
q
Symbol
RthJC
RthJA
Conditions
6 cm² Cu
Max. Value
0.80
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=30A
Tj=25C
Tj=175C
IC=0.43mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
600
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.9
4.9
-
-
-
16.7
-
Unit
max.
-V
2.05
-
5.7
µA
40
2000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=30A
VGE=15V
VGE=15V,tSC5s
VCC = 400V,
Tj = 150C
-
-
-
-
-
-
1630
108
50
167
7
275
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 19.05.2015

विन्यास 12 पेज
डाउनलोड[ IGB30N60T Datasheet.PDF ]


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