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AUIRLS3034-7P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Infineon

भाग संख्या AUIRLS3034-7P
समारोह Power MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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AUIRLS3034-7P pdf
  AUIRLS3034-7P
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.035 ––– V/°C Reference to 25°C, ID = 5mA
–––
–––
1.0
1.2
1.4
1.7
m
VGS
VGS
=
=
10V, ID = 200A 
4.5V, ID = 180A 
1.0 ––– 2.5 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance
RG Gate Resistance
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
370 ––– ––– S VDS = 10V, ID = 220A
––– 1.9 ––– 
–––
–––
–––
–––
20
250
µA
VDS = 40V, VGS = 0V
VDS = 40V,VGS = 0V,TJ =125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
––– 120 180
––– 32 –––
––– 71 –––
––– 49 –––
––– 71 –––
––– 590 –––
––– 94 –––
––– 200 –––
––– 10990 –––
––– 2030 –––
––– 1100 –––
––– 2520 –––
ID = 170A
nC  
VDS = 20V
VGS = 4.5V
VDD = 26V
ns
ID = 220A
RG= 2.7
VGS = 4.5V
VGS = 0V
VDS = 40V
pF   ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
––– 3060 –––
VGS = 0V, VDS = 0V to 32V
Diode Characteristics  
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
–––
–––
––– 380
––– 1540
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
––– ––– 1.3
––– 46 –––
––– 49 –––
V TJ = 25°C,IS = 200A,VGS = 0V 
ns
TJ = 25°C
TJ = 125°C
VDD = 34V
IF = 220A,
–––
–––
100
110
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
 
––– 3.7 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.010mH, RG = 25, IAS = 220A, VGS =10V. Part not recommended for use above this value.
ISD 220A, di/dt 1240A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Ris measured at TJ approximately 90°C.
RJC value shown is at time zero
2 2015-11-4

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