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BT15N120ANF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon FS Planar IGBT - Huajing Microelectronics

भाग संख्या BT15N120ANF
समारोह Silicon FS Planar IGBT
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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<?=BT15N120ANF?> डेटा पत्रक पीडीएफ

BT15N120ANF pdf
BT15N120ANF
R
RθJA Thermal Resistance, Junction to Ambient
-- 40
Electrical Characteristics of the IGBTTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
VCES Collector-Emitter Breakdown Voltage VGE=0V,ICE=250uA 1200 --
--
ICES Collector-Emitter Leakage Current VGE =0V,VCE=VCES -- -- 1.0
IGES(F) Gate to Emitter Forward Leakage
VGE =+20V
-- -- +250
IGES(R) Gate to Source Reverse Leakage
VGE =-20V
-- -- -250
ON Characteristics
Symbol
Parameter
VCE(sat) Collector-Emitter Saturation Voltage
VGE(TH) Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Rating
Test Conditions
Min. Typ. Max.
IC=25A,VGE=15V -- 2.2 2.7
IC=15mA,VCE=Vge 3.5 5.3 7.5
/W
Units
V
mA
nA
nA
Units
V
V
Dynamic Characteristics
Symbol
Parameter
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Test Conditions
VCE=30V,VGE=0V
f=1MHz
Rating
Min. Typ. Max.
-- 2620 --
-- 67 --
-- 43 --
Units
pF
Rating
Test Conditions
Min. Typ. Max.
-- 41.7 --
-- 38.4 --
VCE=600V,IC=25A
VGE=15V, Rg=10Ω
--
--
186.7
369
--
--
Inductive Load
-- 0.83 2.0
-- 1.03 1.5
-- 1.86 3.5
VCE=600V,IC=15A
VGE=15V
--
--
--
127 180
14 22
51 65
Units
ns
mJ
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 2 of 6 201 5 V01

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डाउनलोड[ BT15N120ANF Datasheet.PDF ]


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BT15N120ANFSilicon FS Planar IGBTHuajing Microelectronics
Huajing Microelectronics


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