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BT15N60A9F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon FS Planar IGBT - Huajing Microelectronics

भाग संख्या BT15N60A9F
समारोह Silicon FS Planar IGBT
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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BT15N60A9F pdf
BT15N60A9F
R
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
RθJA Thermal Resistance, Junction to Ambient
Typ.
Max.
Units
-- 5 /W
-- 7 /W
-- 62.5 /W
Electrical Characteristics of the IGBTTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
BVCES Collector-Emitter Breakdown Voltage VGE=0V,ICE=250uA 600 --
--
ICES Collector-Emitter Leakage Current VGE =0V,VCE=VCES -- -- 1.0
IGES(F) Gate to Emitter Forward Leakage
VGE =+20V
-- -- +250
IGES(R) Gate to Source Reverse Leakage
VGE =-20V
-- -- -250
Units
V
mA
nA
nA
ON Characteristics
Symbol
Parameter
VCE(sat) Collector-Emitter Saturation Voltage
VGE(TH) Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Test Conditions
IC=15A,VGE=15V
IC=1mA,VCE=VGE
Rating
Min. Typ. Max.
-- 2.1 2.6
3.5 4.8 6.5
Units
V
V
Dynamic Characteristics
Symbol
Parameter
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Test Conditions
VCE=25V,VGE=0V
f=1MHz
Rating
Min. Typ. Max.
-- 630 --
-- 94 --
-- 23 --
Units
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Test Conditions
Min.
VCE=390V,IC=5A
VGE=15V, Rg=10Ω
Inductive Load
--
--
--
Rating
Typ.
16
18
113
Max.
--
--
--
Units
ns
W UXI CH I NA RE SO U RC ES H UAJI NG MI CR O E L ECT RO NI C S CO . , LT D. Pa ge 2 of 6 2015

विन्यास 6 पेज
डाउनलोड[ BT15N60A9F Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BT15N60A9FSilicon FS Planar IGBTHuajing Microelectronics
Huajing Microelectronics


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