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BT30N60ANF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon FS Planar IGBT - Huajing Microelectronics

भाग संख्या BT30N60ANF
समारोह Silicon FS Planar IGBT
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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<?=BT30N60ANF?> डेटा पत्रक पीडीएफ

BT30N60ANF pdf
BT30N60ANF
R
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to case for Diode
Thermal Resistance, Junction to Ambient
Typ. Max.
-- 0.4
-- 2.88
-- 40
Electrical Characteristics of the IGBTTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
BVCES Collector-Emitter Breakdown Voltage VGE=0V,ICE=250uA 600 --
--
ICES
IGES(F)
Collector-Emitter Leakage Current
Gate to Emitter Forward Leakage
VGE =0V
VCE= 600V
VGE =+20V
-- -- 1.0
-- -- +250
IGES(R) Gate to Source Reverse Leakage
VGE =-20V
-- -- -250
ON Characteristics
Symbol
Parameter
VCE(sat) Collector-Emitter Saturation Voltage
VGE(TH) Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Test Conditions
IC=30A,VGE=15V
IC=1mA,VCE=VGE
Rating
Min. Typ. Max.
-- 2.0 2.5
3.5 4.2 6.5
Dynamic Characteristics
Symbol
Parameter
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Test Conditions
VCE=25V,VGE=0V
f=1MHz
Rating
Min. Typ. Max.
-- 1402 --
-- 140 --
-- 40 --
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Eon
Eoff
Ets
Qg
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Test Conditions
Min.
--
VCE=400V,IC=20A
VGE=15V, Rg=10Ω
Inductive Load
Ta=25
--
--
--
--
--
--
VCE=400V,IC=20A --
Rating
Typ.
32
36
160
65
0.69
0.37
1.06
90
Max.
--
--
--
--
--
--
--
--
Units
/W
/W
/W
Units
V
mA
nA
nA
Units
V
V
Units
pF
Units
ns
mJ
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Page 2 of 5 2015 V01

विन्यास 5 पेज
डाउनलोड[ BT30N60ANF Datasheet.PDF ]


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BT30N60ANFSilicon FS Planar IGBTHuajing Microelectronics
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