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CS740FA9H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel Power MOSFET - Huajing Microelectronics

भाग संख्या CS740FA9H
समारोह Silicon N-Channel Power MOSFET
मैन्युफैक्चरर्स Huajing Microelectronics 
लोगो Huajing Microelectronics लोगो 
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<?=CS740FA9H?> डेटा पत्रक पीडीएफ

CS740FA9H pdf
CS740F A9H
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
vdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 400V, VGS= 0V,
Ta = 25
VDS =320V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=5A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =5A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =10A VDD =200V
VGS = 10V RG = 12
ID =10A VDD =200V
VGS = 10V
Rating
Min. Typ. Max.
400 -- --
-- 0.55 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.36 0.50
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 10 --
-- 1254 --
-- 150 --
-- 21 --
Units
S
pF
Rating
Min. Typ. Max.
-- 13 --
-- 24 --
-- 44 --
-- 28 --
-- 28
-- 7 --
-- 11 --
Units
ns
nC
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 10 2015V01

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CS740FA9HSilicon N-Channel Power MOSFETHuajing Microelectronics
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